朱勤生，研究员，博士生导师。1951年5月生。1978年毕业于南京工学院（东南大学），后考入南京大学物理系攻读硕士研究生，后留校任教。经选拔，于1983年赴日本名古屋大学学习，1986年获硕士学位，1989年获博士学位。在日本期间，主要从事红光InGaAsP/GaAs材料光电特性和蓝紫光GaN材料的物理特性研究。1991年回国，并一直在中国科学院半导体研究所长期从事宽禁带半导体低维结构材料与器件物理研究工作。1995年至2000年曾任表面物理国家重点实验室（半导体所区）实验室主任。2002年作为学术带头人加入半导体材料科学重点实验室MOCVD组（现更名为超宽禁带半导体材料研究组）。2011年5月退休后返聘为学术顾问。2014年4月26日下午5时30分许在家中身亡。 [1]
- 中文名
- 朱勤生
- 国 籍
- 中国
- 出生日期
- 1951年5月
- 逝世日期
- 2014年4月26日
- 毕业院校
- 南京工学院（东南大学）
- 学 历
- 博士研究生
- 职 称
- 研究员
- 职 务
- 博士生导师
殃宙巩谜市泪朽在中科院半导体所任研究陵察员期间，共发表SCI收录学术论文110多篇，其中慨旬影，国际一流杂志Phys.Rev.B 3篇，Appl.Phys.Lett. 28篇，J.Appl.Phys. 12篇,Crystal Growth & Design 1篇，CrystEn员民试g Comm 2篇；申请国家发明船愉专利13项，其中获得授权5项；承担和参与科研项目15项，其中作为项目负责人主持科研项目4项，作为学术骨干参与项目11项。
在半导体材料科学重点实验室任博士生导师期间，共培养和指导研究生40多名。其中：博士36名，硕士4名。有1名博士研究生渗仔希在APL杂志发表的文章被Nature杂志作为研究亮点重点评论报道，其发表在PRB杂志的文章还被美国应用物理协会（AIP）主办的“Virtue Journal”全文转载；有3名博士研究生获得中国科学院半导体研究所“五四青年学术交流会”一等奖；有4名博士研究生获得中国科学院研究生院优秀毕业生称号；有3名博士研究生获得中国科学院研究生院（后更名为中国科学院大学）三好学生标兵称号；有3名博士研究生获得中国科学院院长优秀奖签埋主。
1、作为课题负责人主持的科研项目（合计4项）：
（1）国家973项目“信息功能材料相关基础问题研究”子课题“低维结构材料物理特性研究”（2001-2005年）；
（4）中科院半导体所所长基金项目“垂直入射GaAs/AlGaAs红外吸收的物理特性的研究”（1997-1999年）。
2、作为学术骨干参与的科研项目（合计11项）
（1） 国家863重大专项“高效半导体照明关键材料技术研发”课题1“大尺寸Si衬底GaN基LED外延生长、芯片制备及封装技术”子课题。（2011.1～2013.12）
（2） 国家863项目“生长温度周期调制MOCVD法制备ZnO材料及发光器件研究”（2007.12～2010.12）
（3） 国家863项目”硅基氮化镓厚膜衬底材料制备研究“（2007.12～2010.12）
（4） 国家973项目”全组分可调III族氮化物半导体光电功能材料及其器件应用”，课题5“自支撑AlN衬底材料及AlN/蓝宝石复合衬底材料的制备”子课题（2011.8～2015.8）
（5） 国家973项目“半导体光电信息功能材料的基础研究”子课题:“大失配异质体系材料衬底研究”（2006.9～2011.9）
（6） 国家自然科学基金重大研究计划“面向能源的光电转换材料”培育项目“利用玻璃衬底制备新型InGaN 基量子点全光谱太阳电池材料研究”（2013.1-2015.12）
（7） 国家自然科学基金面上项目“生长温度周期调制的MOCVD法制备p型ZnO薄膜研究”（2008.1～2010.12）
（9） 国家自然基金面上项目“硅基无应变InGa(Al)N/InGaAlN量子阱的研究”（2004.1～2006.12）
（10） 中国科学院科研装备研制项目“氮化镓专用复合型MOCVD-HVPE生长设备”（2005.11～2007.11）
（11） 院地合作技术咨询项目“协助杭州钱宏光电科技有限公司组建半导体材料生产线技术咨询项目”（2007.11～2010.11）
一、发表学术论文（合计117篇）
[1]Q.S.Zhu, S.M.Mou,X.C.Zhou and Z.T.Zhong, Determination of the condution band offset of a singleAlGaAs barrier layer using deep level transient spectroscopy,Appl. Phys. Lett.,62 (1993) 2813.
[2]Q.S.Zhu, K.Hiramatsu,N.Sawaki, I.Akasaki and X.N.Liu, Field effect on thermal emission from the 0.40eV electron level in InGaP,J.Appl.Phys.,73 (1993) 771.
[3]Q.S.Zhu, K.Hiramatsu,N.Sawaki, I. Akasaki and X.N.Liu, Deep center scattering potential in InGaP,J. Appl. Phys.,76 (1994) 7410.
[4]Q.S.Zhu, Z.T.Zhong, L.W.Lu, C.F.Li, Determination of the subband energy in the V – shaped potentialwell of d - doped potential well of d - doped GaAs by deep level transientspectroscopy,Appl. PhysLett.,65(1994) 2425.
[5]Q.S.Zhu, Z.Q.Gu, Z.T.Zhong,Z.Q.Zhou and L.W.Lu, Determination of the X conduction subband energies in typeII GaAs/AlAs /GaAs quantum well by deep level transient spectroscopy ,Appl. Phys Lett.67 (1995) 3593.
[6]Q.S.Zhu, X.B.Wang,Q.G.Du, Z.T.Zhong and Y.R.Xing, Infrared absorption due totwo-dimensional-electron-gas collective excitation in GaAs/AlxGa1-xAsmultiple-quantum-well Structures,Phys.Rev. B,52 (1995) 1848.
[7]Q.S.Zhu, X.B.Wang, Z.T.Zhong,X.C. zhou, Y.P.He, Z.P.Cao, G.Z.Zhang, J. Xiao, X.H.Sun, H.Z.Yang, Q.G.Du ，Intrasubbandand intersubband transitions in lightly and heavily doped GaAs /AlxGa1-xAsmultiple quantum wells,Phys.ReV. B. , 57 (1998) 12388-12396
[8]Q.S.Zhu, N.Sawaki, Nitrogenvacancy scattering in n-GaN grown by MOVPE,Appl.Phys. Lett. , 76 (2000) 1594-1596
[9]Q.S.Zhu, H.Nagai, Y. Kawaguchi,K.Hiramatsu, and N.Sawaki, Effect of thermal annealing on hole trap levels inMg-doped GaN grown by metal-organic vaper phase epitaxy,J.Vac.Sci. Technol. A, 18 (2000) 261-267
[10]Q.S.Zhu, H.Matsushima, K.Hiramatsu,N.Sawaki, Cathodoluminescence on GaN hexagonal pyramids on submicrondot-patterns via selective MOVPE,AppliedSurface Science, 167 (2000) 149-151
[11]Q.S.Zhu, Y.P.He, Z.T.Zhong,X.H.Sun and K.Hiramatsu, Infrared absorption efficiency in AlAs/AlxGa1-xAstype II multiple-Quantum-well Structure grown on (211) GaAs substrate,Phys. Stat. Sol. (b), 217(2000) 833-840
[12]Qingsheng Zhu, Ju Wu, ChengmingLi, Zhanguo Wang, Conduction and valence band discontinuities in some newsemiconductou heterojunctions,Journalof Nanoscience and nanotechnology,11,9368-9383, 2011(综述文章)
[13] H.Nagai,Q.S.zhu, Y.Kawaguchi,K.Hiramatsu, and N. Sawaki，Holetrap levels in Mg-doped GaN grown by MOVPE，Appl. Phys. Lett.,73 (1998) 2024-2026
[14] Y.P.He,Q.S.Zhu,Z.T.Zhong, G.Z.Zhang, J.Xiao, Z.P.Cao, X.H.Sun, H.Z. Yang ，Line widthof the infrared absorption spectra due to bound-to-continuum transition inGaAs/AlxGa1-xAs multiple quantum well structures，Appl.Phys. Lett., 73 (1998) 1131-1133
[15] Zhen Chen, Da-Cheng Lu,Peide Han, Xianglin Liu, Xiaohui Wang, Yufeng Li, Hairong Yuan, Yuan Lu, LidaBing,Qinsheng Zhu, andZhanguo Wang , The structure and current voltagecharacteristicsof multi-sheet InGaN quantum dotsgrown by a new method,J.Cryst. Growth，243(2002)19-24
[16] Zhen Chen, Hairong Yuan,Da-Cheng Lu, Xuehao Sun, Shouke Wan, Xianglin Liu, Peide Han, Xiaohui Wang,QinshengZhu, and Zhanguo Wang, Nitrogen vacancy scattering in GaN grownby metal-organic vapor phase epitaxy,Solid-StateElectronics,46(2002)2069-2074
[17] B. Z. Qu,Q.S. Zhu, X. H. Sun, S. K. Wan, and Z. G. Wang, Photoluminescenceof Mg-doped GaN grown by metalorganic chemical vapor deposition,J. Vac. Sci. Technol. A,21（2003）838-841
[18] Baozhuang Qu, Zhen Chen, Dacheng Lu, Peide Han,Xianglin Liu,Xiaohui Wang, Du Wang,Qinsheng Zhu, ZhanguoWang, Structure characteristics of InGaN quantumdots fabricatedby passivation and lowtemperature method,J. Cryst.Growth，252(2003) 19–25
[19] Qu Baozhuang ,ZhuQinsheng, Chen Zhen, Lu Dacheng, Han Peide, Liu Xianglin, WangXiaohui, Sun Xuehao, Li Yufeng, Lu Yuan, Li Dabing, Wang Zhanguo(曲宝壮，朱勤生，陈振，陆大成，韩培德，刘祥林，王晓晖，孙学浩，李昱峰，陆沅，黎大兵，王占国),Structure and I-V characteristics of InGaN quantumdots grown by a new method(新工艺生长的InGaN量子点的结构与电学性质研究),Journal of Functional Materials and devices(功能材料与器件学报),l9( 2003)12-15
[20] Y. Lu, G. W. Cong, X. L. Liu,D. C. Lu,Q. S. Zhu, X. H. Wang,J. J. Wu, Z.G. Wang,Growth of crack-free GaN films on Si(111) substrate byusing Al-rich AIN buffer layer,J.Appl. Phys., 96(9) (2004) 4982-4988
[21] J. M. Li, Y. W. Lu, D. B.Li, X. X. Han,Q. S. Zhu, X. L.Liu, Z. G. Wang, Effect of spontaneous and piezoelectric polarization onintersubband transition in AlxGa1-xN/GaN quantum well ,Journal of Vacuum Science andTechnology B, 22-6 (2004) 2568-2573
[22] Xiuxun Han, Zhen Chen,Dabing Li, Jiejun Wu, Jiemin Li, Xuehao Sun, Xianglin Liu, Peide Han, XiaohuiWang,Qinsheng Zhu, ZhanguoWang, Structural and optical properties of 3D growth multilayer InGaN/GaNquantum dots by metalorganic chemical vapor deposition,J. Cryst. Growth，266(2004)423-428
[23] Jiejun Wu, Dabing Li, YuanLu, Xiuxun Han,Jiemin Li,Hongyuan Wei, Tingting Kang, Xiaohui Wang, Xianglin Liu,QinshengZhuand ZhanguoWang , Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrateby metalorganic chemical vapor deposition ,J. Cryst. Growth，273 (2004)79-95
[24] Xiuxun Han,Dabing Li, Hairong Yuan, XuehaoSun, Xianglin Liu, Xiaohui Wang，QinshengZhu, Zhanguo Wang , Dislocation scattering in a two-dimensionalelectron gas of an AlxGa1-xN/GaN heterostructure ,Physica Status Solidi (b) ,241 (2004) 3000-3008
[25] G.W.Cong, H.Y.Wei,P.F.Zhang, W.Q.Peng, J.J.Wu, X.L.Liu, C.M.Jiao,W.G.Hu,Q.S.Zhu,Z.G.Wang, One-step growth of ZnO from films to vertically well-aligned nanorodsand the morphology-dependent raman scattering,Appl. Phys. Lett., 87 (2005)231903-231905
[26] Han, Xiuxun Li, Jiemin; Wu,Jiejun; Cong, Guangwei; Liu, Xianglin;Zhu, Qinsheng; Wang,Zhanguo, Intersubband optical absorption in quantum dots-in-a-wellheterostructures,J. Appl.Phys., 98（5）（2005）1-5
[27] Jiejun Wu, Xiuxun Han,Jiemin Li, Dabing Li, Yuan Lu, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhuandZhanguo Wang, Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloyas compliant interlayer by metalorganic chemical vapor deposition ,J. Cryst. Growth，279 (2005)335-340
[28] J.M. Li, X.X. Han, J.J. Wu,X.L. Liu,Q.S. Zhuand Z.G. Wang, Origin of the blueshiftin the infrared absorbance of intersubband transitions in AlxGa1-xN/GaN multiple quantum wells,Physica E:Low-dimensionalsystems & nanostructures,25(2005) 575-581
[29] Z. Chen, S.J. Chua, P.D.Han, X.L. Liu, D.C. Lu,Q.S. Zhu, Z.G. Wang,S. Tripathy , Luminescence properties of multi-layer InGaN quantum dots grownon C- and R-plane sapphire substrates ,PhysicaE: Low-dimensional systems & nanostructures,27 (2005) 314-318
[30] Xiuxun Han, Jiemin Li,Jiejun Wu, Guangwei Cong,. Xianglin Liu,Qinsheng Zhu,Zhangguo Wang , Theoretical analysisof gate voltage-controlled subband states in an AlxGa1−xN/GaNheterostructure,Physica E:Low-dimensional systems & nanostructures,28（3）（2005）230-236
[31] J.M.Li, Y.W. Lu, X.X. Han,J.J. Wu, X.L. Liu,Q.S. Zhuand Z.G. Wang, Theoreticalinvestigation of intersubband transition in AlxGa1−xN/GaN/AlyGa1−yNstep quantum well ,Physica E:Low-dimensionalsystems & nanostructures,28(2005) 453-461
[32] XiuXun Han, Jiemin Li,Jiejun Wu, Xiaohui Wang, Dabing Li, Xianglin Liu, Peide Han,QinshengZhu, Zhanguo Wang, Effects of different modified underlayersurface on growth and optical properties of InGaN quantum dots,Vacuum,77(2005)307-314
[33] Xiuxun Han, Jiejun Wu,Jiemin Li, Guangwei Cong, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Photoluminescence investigation of two-dimensional electron gas in anundoped AlxGa1-xN/GaN heterostructure,ChinesePhysics Letter, 22 (8)（2005）2096-2099
[34] G. W. Cong, W. Q. Peng, H.Y. Wei, X. X. Han, J. J. Wu, X. L. Liu,Q. S. Zhu, Z. G. Wang,J. G. Lu, Z. Z. Ye, L. P. Zhu,H.J. Qian, R. Su, C. H. Hong, J. Zhong, K. Ibrahim, T. D. Hu, Comparison ofvalence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnOfilms ,Appl. Phys. Lett.88(2006) 062110-062112
[35] G. W. Cong, W. Q. Peng, H.Y. Wei, X. L. Liu, J. J. Wu, X. X. Han,Q. S. Zhu, Z. G. Wang,Z. Z. Ye, J. G. Lu, L. P. Zhu, H. J. Qian, R. Su,C. H. Hong, J. Zhong, K. I.brahim, T. D. Hu , Aluminium Doping Induced Enhancement of p-d Coupling in ZnO,J. Phys.: Condens. Matter. 18,3081-3087 (2006)
[36] T. T. Kang, X. L. Liu, R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao,Q. S. Zhu, InN nanoflowers grown by metal organic chemical vapor deposition,Appl. Phys. Lett.89(2006) 07113
[37] Jiejun Wu, Jiemin Li,Guangwei Cong, Hongyuan Wei, Panfeng Zhang, Weiguo Hu, Xianglin Liu,QinshengZhu, and Zhanguo Wang , Temperature dependence of nano-scaleindium clusters and their effects on luminescence properties in InAlGaNquaternary alloys on Si(111) substrates,Nanotechnology, 17 (2006) 1251-1254
[38] Jiejun Wu, Xiuxun Han ,Jiemin Li, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhu, Zhanguo Wang, Quanjie Ji, Liping Guo, Tiandou Hu, HuanhuaWang, Crack control in GaN grown on silicon (111) using In dopedlow-temperature AlGaN interlayer by metalorganic chemical vapor deposition ,Optical Materials，28（10） (2006) 1227–1231
[39] Riqing Zhang, Panfeng Zhang,Tingting Kang, Haibo Fan, Xianglin Liu, Shaoyan Yang,Hongyuan Wei,QinshengZhu, Zhanguo Wang , Determination of the valence band offset ofwurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy,Appl. Phys. Lett.91, 162104 （2007）
[40] J. M. Li , K. Y. Qian,Q.S. Zhu, Z. G. Wang , Intrasubband and intersubband transitionsin GaAs/AlGaAs multiple quantum wells,Appl.Phys. Lett. 90(2007) 162111.
[41] Ting-Ting Kang，R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao, X. X. Han, S. Y. Yang, X. L. Liu,Q.S. Zhu, Z. G. Wang, Plasmons in vertically coupled InAs/GaAsquantum dots,Phys. Rev. B 76, 075345 (2007),（被美国AIP主办的VirtueJournal杂志全文转载）
[42] Jiejun Wu, Guoyi Zhang,Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Quanjie Jia, Liping Guo, Effect of an indium-doped barrier on enhancednear-ultraviolet emission from InGaN/AlGaN:In multiple quantum wells grown onSi(111) ,Nanotechnology, 18 (2007) 015402
[43] Wei HY, Cong GW, Zhang PF,Hu WG, Wu JJ,Jiao CM, Liu XL,ZhuQS, Wang ZG, Combined structure of ZnO vertical well-alignednanorods and net-like structures on AIN/sapphire,J. Cryst. Growth，306(1) ,12-15 (2007)
[44] P F Zhang, X L Liu, H Y Wei,H B Fan, Z M Liang, P Jin, S Y Yang, C M Jiao,QS Zhuand Z GWang, Rapid thermal annealing properties of ZnO films grown using methanol asoxidant,J. Phys. D: Appl.Phys. 40 (2007) 6010–6013.
[45] Wei HY, Hu WG, Zhang PF, LiuXL,Zhu QS, Wang ZG, ZnOnanostructures grown on AlN/sapphire substrates by MOCVD,Chinese Physics Letters,24,1738(2007)
[46] Fan HB, Yang SY, Zhang PF,Wei HY, Liu XL, Jiao CM,Zhu QS, Chen YH，Wang ZG,Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films byphotoluminescence and x-ray photoelectron spectroscopy,Chinese Physics Letters,24,2108-2111 (2007)
[47] Hu Wei-Guo, LIU Xiang-Lin,Zhang Pan-feng, Zhao Feng-Ai, Jiao Chun-Mei, Wei Hong-Yuan, Zhang Ri-Qing, WuJie-Jun, Cong Guang-Wei, Pan Yi, A comparison between AlN films grown by MOCVDusing Dimethylethylamine Alane and Trimethylaluminum as the aluminumprecursors,Chinese PhysicsLetters, 24,516 (2007 )
[48] Zhang Panfeng, Wei Hongyuan,Fan Haibo, Cong Guangwei, Yang Shaoyan，Zhu Qinsheng,Liu Xianglin, Effect of different facets of sapphire and oxidizers on thegrowth of ZnO films,ChineseJournal of Semiconductoes, 28 sup. (2007) 132
[49] Riqing Zhang, Yan Guo,Huaping Song, Xianglin Liu, Shaoyan Yang, Hongyuan Wei,QinshengZhu, Zhanguo Wang, Band alignment of InN/GaAs heterojunctiondetermined by x-ray photoelectron spectroscopy,Appl. Phys. Lett. 93122111 (2008)
[50] B. L. Zhang, F. F. Cai, G.S. Sun, H. B. Fan, P. F. Zhang, H. Y. Wei, X. L. Liu, S. Y. Yang,Q.S. Zhu, Z. G. Wang，Valence band offset of MgO/4H-SiCheterojunction measured by x-ray photoelectron spectroscopy，Appl.Phys. Lett. 93, 072110 (2008)
[51] H. B. Fan,G. S. Sun, S. Y.Yang,P. F. Zhang, R. Q. Zhang,H. Y. Wei, C. M. Jiao, X. L. Liu, Y. H. Chen,Q.S. Zhu, Z. G. Wang, Valence band offset of ZnO/4H-SiCheterojunction measured by x-ray photoelectron spectroscopy,Appl. Phys. Lett. 92,192107(2008)
[52] Xiaoqing Xu, Xianglin Liu,Xiuxun Han, Hairong Yuan, Jun Wang, Yan Guo, Huaping Song, Gaolin Zheng,Hongyuan Wei, Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, Dislocation scattering in AlxGa1-xN/GaN heterostructures, Appl. Phys.Lett. 93, 182111 (2008)
[53] P. F. Zhang, X. L. Liu, R.Q. Zhang, H. B. Fan, H. P. Song, H. Y. Wei, C. M. Jiao, S. Y. Yang,Q.S. Zhu, Z. G. Wang, Valence band offset of MgO/InNheterojunction measured by x-ray photoelectron spectroscopy,Appl. Phys. Lett., 92,042906 (2008)
[54] P. F. Zhang, X. L. Liu, R.Q. Zhang, H. B. Fan, A. L. Yang, H. Y. Wei, P. Jin, S. Y. Yang,Q.S. Zhu, Z. G. Wang, Valence band offset of ZnO/GaAsheterojunction measured by x-ray photoelectron spectroscopy, Appl. Phys. Lett.92 012104 (2008)
[55] B. L. Zhang, G. S. Sun, Y.Guo, P. F. Zhang, R. Q. Zhang, H. B. Fan, X. L. Liu, S. Y. Yang,Q.S. Zhu,Z. G.Wang，Valenceband offset of InN/4H-SiC heterojunction measured by x-ray photoelectronspectroscopy，Appl.Phys. Lett. , 93, 242107（2008）
[56] Panfeng Zhang, Hongyuan Wei,Guangwei Cong, Weiguo Hu, Haibo Fan,JieJun Wu,Qinsheng Zhu, Xianglin Liu, Effects ofdisk rotation rate on the growth of ZnO films by low-pressure metal-organicchemical vapor deposition，ThinSolid Film, 516, 925 (2008)
[57] A L Yang, H Y Wei, X L Liu,H P Song, H B Fan, P F Zhang, G L Zheng, S Y Yang,Q S Zhu, Z G Wang，Characterizationof ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metalorganic chemical vapour deposition，J. Phys. D: Appl. Phys., 41,205416（2008）
[58] Zhang Ri-Qing, LiuXiang-Lin, Kang Ting-Ting, Hu Wei-Guo, Yang Shao-Yan, Jiao Chun-Mei,ZhuQing-Sheng，Influenceof different interlayers on growth mode and properties of InN by MOVPE，ChinesePhysics Letters,25(1),pp 238-241, 2008
[59] Fan Hai-Bo, Yang Shao-Yan,Zhang Pan-Feng, Wei Hong-Yuan, Liu Xiang-Lin, Jiao Chun-Mei,ZhuQin-Sheng, Chen Yong-Hai, Wang Zhan-Guo，A simpleroute of morphology control and structural and optical properties of ZnO grownby metal-organic chemical vapour deposition，Chinese Physics Letters,25(8),pp 3063-3066, 2008
[60] Xiaoqing Xu, Xianglin Liu ,Shaoyan Yang , Jianming Liu , hongyuan wei ,Qinsheng Zhu, Zhanguo Wang, Dislocation coreeffect scattering in a quasi-triangle potential well,Appl. Phys. Lett.,94, 112102 (2009)
[61] A. L. Yang, H. P. Song, X.L. Liu, H. Y. Wei, Y. Guo, G. L. Zheng, C. M. Jiao,S. Y. Yang,Q.S. Zhu, Z. G. Wang, Determination of MgO/AlN heterojunctionband offsets by x-ray photoelectron spectroscopy,Appl. Phys. Lett.,94, 052101 (2009)
[62] A. L. Yang, H. P. Song, H.Y. Wei, X. L. Liu, J. Wang, X. Q. Lv, P. Jin, S. Y. Yang,Q.S. Zhu, Z. G. Wang, Measurement of polar C-plane and nonpolarA-plane InN/ZnO heterojunctions band offsets by x-ray photoelectronspectroscopy,Appl. Phys.Lett.,94, 163301(2009)
[63] H. P. Song, A. L. Yang, H.Y. Wei, Y. Guo, B. Zhang, G. L. Zheng, S. Y. Yang, X. L. Liu,Q.S. Zhu, Z. G. Wang, T. Y. Yang, H. H. Wang，Determinationof wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectronspectroscopy,Appl. Phys.Lett., 94, 222114 (2009)
[64] Huaping Song, Anli Yang,Riqing Zhang, Yan Guo, Hongyuan Wei, Gaolin Zheng, Shaoyan Yang, Xianglin Liu,QinshengZhu, Zhanguo Wang, Well-Aligned Zn-Doped InN Nanorods Grown byMetal-Organic Chemical Vapor Deposition and the Dopant Distribution,Crystal Growth & Design,9(7), 3293-3295 (2009)
[65] Jun Wang , Shu-Shen Li,Yan-Wu Lu, Xiang-Lin Liu, Shao-Yan Yang ,Qin-Sheng Zhu, Zhan-Guo Wang, Binding Energy andSpin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaNTriangle-Shaped Potential Quantum Well,NanoscaleRes. Lett.,4,1315–1318 (2009)
[66] A.L. Yang, H.Y. Wei, X.L.Liu, H.P. Song, G.L. Zheng, Y. Guo, C.M. Jiao, S.Y. Yang,Q.S.Zhu, Z.G. Wang, Synthesis and characterization of well-alignedZn1-xMgxO nanorods and film by metal organic chemical vapor deposition,Journal of Crystal Growth,311（2），278-281(2009)
[67] Huaping Song, Yan Guo, AnliYang, Hongyuan Wei, Xiaoqing Xu, Jianming Liu, Shaoyan Yang Xianglin Liu,QinshengZhu，ZhanguoWang，The roleof zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system，CrystEngComm, 12,3936-3941( 2010)
[68] A.L.Yang, H.P.Song,D.C.Liang, H.Y.Wei, X.L.Liu, P.Jin, X.B.Qin, S.Y.Yang,Q.S.Zhu,Z.G.Wang, Photoluminescence spectroscopy and positron annihilation spectroscopyprobe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films,Appl. Phys. Lett.,96,151904(2010)
[69] Xiaoqing Xu, Xianglin Liu,Yan Guo, Jun Wang, Huaping Song, Shaoyan Yang,Hongyuan Wei,QinshengZhu, Zhanguo Wang, Influence of band bending andpolarization onthe valence band offset measured by x-ray photoelectron spectroscopy,J. Appl. Phys.,107, 104510 (2010).
[70] Yafeng Song, Yanwu Lv, BiaoZhang, Xiaoqing Xu, Jun Wang, Yan Guo, Kai Shi, Zhiwei Li, Xianglin Liu,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, Intersubband absorption energy shifts in 3-level system for asymmetricquantum well terahertz emitters,J. Appl. Phys.,108, 083112(2010)
[71] Y.Guo, X.L.Liu, H.P.Song,A.L.Yang, X.Q.Xu, G.L.Zheng, H.Y.Wei, S.Y.Yang,Q.S.Zhu, Z.G.Wang, A study of indiumincorporation in In-rich InGaN grown by MOVPE,Applied Surface Science,256,3352-3356(2010)
[72] Gaolin Zheng, Anli Yang,Hongyuan Wei, Xianglin Liu, Huaping Song, Yan Guo, Caihong Jia, Chunmei Jiao,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, “Effects of annealing treatment on the formation of CO2 inZnO thin films grown bymetal-organic chemical vapor deposition”,AppliedSurface Science,256, 2606(2010).
[73] Zhiwei Li, XiaoqingXu,JunWang, JianmingLiu, XianglinLiu, ShaoyanYang,QinshengZhu, ZhanguoWang , Cluster scattering in two-dimensionalelectron gas investigated by Born approximation and partial-wave methods,Physica E,43, 543–546(2010)
[74] H.P. Song, G.L. Zheng, A.L.Yang, Y. Guo, H.Y. Wei, C.M. Li, S.Y. Yang, X.L. Liu,Q.S.Zhu, Z.G. Wang, The growth of ZnO on bcc-In2O3 buffer layersand the valence band offset determined by X-ray photoemission spectroscopy,SolidState Communications, 150,1991–1994(2010)
[75] J. M. Liu, X. L. Liu, X. Q.Xu, J. Wang, L.M.Li, H. Y. Wei, S. Y. Yang,Q. S. Zhu, Y.M.Fan,X.W.Zhang , Z. G. Wang, Measurement of w-InN/h-BN heterojunction band offsetsby x-ray photoemission spectroscopy,NanoscaleResearch Letters,5, 1340–1343(2010)
[76] Y.Guo, X.L.Liu, H.P.Song,A.L.Yang, G.L.Zheng, H.Y.Wei, S.Y.Yang,Q.S.Zhu, Z.G.Wang,Measurement of GaN/Ge(001) heterojunction valence offset by x-ray photoelectronspectroscopy,Chinese PhysicsLetters,.27(6) , 067302 (2010)
[77] Gaolin Zheng, Jun Wang,Xianglin Liu, Anli Yang, Huaping Song, Yan Guo, Hongyuan Wei, Chunmei Jiao,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, “Valence band offset of MgO/TiO2(rutile) heterojunction measured by x-rayphotoelectron spectroscopy”,AppliedSurface Science,256,7327(2010)
[78] WANG Zhen-Hua(王振华)， YANGAn-Li(杨安丽)， LIUXiang-Lin(刘祥林)，WEIHong-Yuan(魏鸿源)，JIAOChun-Mei(焦春美)，ZHUQin-Sheng(朱勤生)， YANG Shao-Yan(杨少延)， WANGZhan-Guo(王占国)，Temperaturedependence of structural and optical properties of ZnO films grown usingmethanol as oxidant by MOCVD，人工晶体学报，39（2010）34-38
[79] Xiaoqing Xu, Yan Guo,Xianglin Liu, Jianmin Liu, Huaping Song, Biao Zhang, JunWang, Shaoyan Yang,Hongyuan Wei,Qinsheng Zhu, ZhanguoWang,’GaN grown with InGaN as a weakly bonded layer’,CrystEngComm13,1580(2011)
[80] Jianming Liu, Xianglin Liu,ChengmingLi, Hongyuan Wei,Yan Guo,Chunmei Jiao,Zhiwei Li,Xiaoqing Xu,HuapingSong,Shaoyan Yang,QinshengZhu,Zhanguo Wang,Anli Yang,Tieying Yang, Huanhua Wang,Investigation of cracks in GaN films grown by combined hydride and metalorganic vapor-phase epitaxial method’,NanoscaleResearch Letters,6,69(2011)
[81] K Shi, AL Yang,J Wang,HPSong,XQ Xu,L Sang, HY Wei, SY Yang,XL Liu,QS Zhu,ZG Wang, The effect of differentoriented sapphire substrates on the growth of polar and non-polar ZnMgO byMOCVD,J.Cryst.Growth, 39,314(2011)
[82] Liu, G. Wu, J. Lu, Y. Zhang,B. Li, C. Sang, L. Song, Y. Shi, K. Liu, X. Yang,Q.S.Zhu, Wang, Z.，Atheoretical calculation of the impact of GaN cap and AlxGa1-xNbarrier thickness fluctuations on two-dimensional electron gas inGaN/AlxGa1-xN/GaN heterostructure，IEEE Transactions on ElectronDevices, 58(12), 4272( 2011)
[83] Guipeng Liu,Ju Wu,Yanwu Lu,ZhiweiLi,Yafeng Song, Chengming Li,Shaoyan Yang,Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Scattering due to spacer layer thickness fluctuation on two dimensionalelectron gas in AlGaAs/GaAs modulation-doped heterostructures ,J. Appl.Phys.,110,023705( 2011)
[84] BiaoZhang, HuapingSong,JunWang, CaihongJia, JianmingLiu, Xiaoqing Xu, XianglinLiu, ShaoyanYang,QinshengZhu,ZhanguoWang, MOCVD growth of a-planeInNfilmson r-Al2O3 with different buffer layers,J.Cryst. Growth, 319, 114 (2011)
[85] Biao Zhang, Huaping Song,Xiaoqing Xu, Jianming Liu, Jun Wang, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Well-aligned Zn-doped tilted InN nanorodsgrown on r-plane sapphire by MOCVD,Nanotechnology,22, 235603 (2011)
[86] Jun Wang, Xianglin Liu,AnliYang,Gaolin Zheng, Shaoyan Yang,Hongyuan Wei,Qinsheng Zhu,Zhanguo Wang, Measurement ofwurtzite ZnO/rutile TiO(2) heterojunction band offsets by x-ray photoelectronspectroscopy,Applied PhysicsA-Materials Science & Processing,103,1099(2011)
[87] K Shi,XL Liu,DB Li, J Wang,HP Song,XQ Xu,HY Wei,CM Jiao,SY Yang,H Song,QS Zhu,ZG Wang,Valence band offset ofGaN/diamond heterojunction measured by X-ray photoelectron spectroscopy,Applied Surface Science,257,8110(2011)
[88] Zhiwei Li, Biao Zhang, JunWang, Jianming Liu, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Valence band offset of wurtzite InN/SrTiO(3)heterojunction measured by x-ray photoelectron spectroscopy,Nanoscale Research Letters,6,193 (2011)
[89] K Shi, DB Li, HP Song,YGuo,J Wang, XQ Xu, JM Liu, AL Yang, HY Wei, B Zhang, SY Yang, XL Liu,QSZhu, ZG Wang, Determination of InN/Diamond Heterojunction BandOffset by X-ray Photoelectron Spectroscopy,NanoscaleResearch Letters,6,50 (2011)
[90] K. Shi, P. F. Zhang, H. Y.Wei, C. M. Jiao, P. Jin, X. L. Liu, S. Y. Yang,Q.S. Zhu, Z. G. Wang,Thermal diffusion of nitrogen into ZnO filmdeposited on InN/sapphire substrate by metal organic chemical vapor deposition,J.Appl. Phys. 110, 113509 (2011)
[91]Shi, K;Zhang, PF; Wei, HY;Jiao, CM;Li, CM;Liu, XL;Yang, SY;Zhu, QS;Wang, ZG,Energy band alignment of MgO(111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy,Solid State Commuincations,152,938(2012)
[92] Zhiwei Li，hongyuanWei, Xiaoqing Xu, Guijuan Zhao, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Growth of a-plane GaN on r-plane sapphire byself-patterned nanoscale epitaxial lateral overgrowth,J. Cryst. Growth, 34810-14(2012)
[93] Song Ya-Feng,Lu Yan-Wu;WenWei; Liu Xiang-Lin; Yang Shao-Yan,Zhu Qin-Sheng,Wang Zhan-Guo, Plasmons in a free-standingnanorod with a two-dimensional parabolic quantum well caused by surface states,Chin. Phys. B,057302 (2012)
[94] Guipeng Liu, Ju Wu1, YanwuLu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, XianglinLiu,Qinsheng Zhu, andZhanguo Wang,Two-dimensional electron gas mobility limited by barrier and quantumwell thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells,Appl. Phys. Lett.,100,162102 (2012);
[95] Guipeng Liu, Ju Wu, GuijuanZhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu,QinshengZhu, and Zhanguo Wang, Impact of the misfit dislocations ontwo-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures,Appl. Phys. Lett.,100, 082101 (2012)
[96] Sang Ling;Liu Jian-Ming; XuXiao-Qing;Wang Jun; Zhao Gui-Juan;Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; WeiHong-Yuan; Liu Xiang-Lin; Yang Shao-Yan;Zhu Qin-Sheng; WangZhan-Guo, Morphological Evolution of a-GaN on r-Sapphire by MetalorganicChemical Vapor Deposition,Chin.Phys, Lett., 29,026801 (2012)
[97] SANG Ling, WANG Jun, SHIKai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan,ZHUQin-Sheng, WANG Zhan-Guo,The Growth of Semi-Polar ZnO(10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant byMetalorganic Chemical Vapor Deposition,Chin.Phys, Lett., 29(018101)2012
[98] Gu Cheng-Yan, Liu Gui-Peng,Shi Kai, Song Ya-Feng, Li Cheng-Ming,, Liu Xiang-Lin, Yang Shao-Yan,ZhuQin-Sheng,WangZhan-Guo,Spacer layer thickness fluctuation scattering in a modulation-dopedAl(x)Ga(1-x)As /GaAs/ Al(x)Ga(1-x)As quantum well,Chin. Phys. B,2,107305 (2012)
[99] Zhao Guijuan,Li zhiwei, WeiHongyuan, Liu Guipeng, Liu Xianglin, Yang Shaoyan,ZhuQinsheng, Wang Zhanguo，Growth and characterization of an a-planeInxGa1-xN on a r-plane sapphire，Chin.Phys, lett.,29(117103)2012
[100]Li, Huijie;Liu, Xianglin;Wang, Jianxia;Jin, Dongdong;Zhang, Heng;Yang, Shaoyan;Liu, Shuman;Mao, Wei;Hao, Yue;Zhu, Qinsheng;Wang, Zhanguo，Calculation of discrepancies in measuredvalence band offsets of heterojunctions with different crystal polarities，J. Appl.Phys., 112（113712）2012
[101] Bing Liu, Yanwu Lu, YanHuang, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Interfacial misfit dislocation scattering effect intwo-dimensional electron gas channel of GaN heterojunction”,Physics Letters A, 376, 1067 (2012).
[102] Dong Ji, Bing Liu, YanwuLu, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Polarization-induced remote interfacial charge scattering inAl2O3/AlGaN/GaN double heterojunction high electron mobility transistors”,Appl. Phys. Lett. ,100, 132105 (2012)
[103] Dong Ji, Yanwu Lu, BingLiu, Guipeng Liu,Qinsheng Zhu, Zhanguo Wang, Theoreticalcalculation of the interfacial charge-modulated two-dimensional electron gasmobility in Al2O3/AlGaN/GaN double heterojunction high electron mobilitytransistors,Solid StateCommuincations,153, 53,(2012)
[104] Dong Ji, Yanwu Lu, BingLiu, Guangri Jin, Guipeng Liu,Qinsheng Zhu, ZhanguoWang, Electric field-induced scatterings in rough quantum wells of AlGaN/GaNhigh-mobility electronic transistors,J.Appl. Phys.,112, 024515(2012)
[105] Changbo Liu, Guijuan Zhao,Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, Scattering due to large cluster embedded in quantum wells,Appl. Phys. Lett.102, 052105 (2013)
[106] Huijie Li, Guipeng Liu,Hongyuan Wei, Chunmei Jiao, Jianxia Wang, Heng Zhang, Dong Dong Jin, YuxiaFeng, Shaoyan Yang, Lianshan Wang,Qinsheng Zhu, Zhan-GuoWang，Scatteringdue to Schottky barrier height spatial fluctuation on two dimensional electrongas in AlGaN/GaN high electron mobility transistors，Appl.Phys. Lett.103,232109 (2013)
[107] Dong-Dong Jin, Chao Jiang,Guo-Dong Li, Liu-Wan Zhang, Tao Yang, Xiang-Lin Liu, Shao-Yan Yang,Qin-ShengZhu, Zhan-Guo Wang, Scattering due to anisotropy of ellipsoidquantum dots in GaAs/InGaAs single quantum well,J. Appl. Phys., 113, 033701(2013)
[108] Dong-Dong Jin, Shao-YanYang, Liu-Wan Zhang, Hui-jie Li, Heng Zhang, Jian-xia Wang, Tao Yang,Xiang-LinLiu,Qin-Sheng Zhu,Zhan-Guo Wang,Electron scattering in GaAs/InGaAs quantum wells subjected to anin-plane magnetic field,J.Appl. Phys., 113, 213711 (2013)
[109] Ling Sang, Shao Yan Yang,Gui Peng Liu, Gui Juan Zhao, Chang Bo Liu, Cheng Yan Gu, Hong Yuan Wei,XiangLin Liu,Qin Sheng Zhu, ZhanGuo Wang, Dislocation Scattering in ZnMgO/ZnO Heterostructures ,IEEE Transactions on ElectronDevices,60(6),2077-2079(2013)
[110] Changbo Liu, Shaoyan Yang*,Kai Shi, Guipeng Liu, Heng Zhang, Dongdong Jin, Chengyan Gu, Guijuan Zhao, LingSang, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Two dimensional electron gas mobility limited by scattering of quantumdots with indium composition transition region in quantum wells,Physica E:Low-dimensional Systems andNanostructures, 52，150-154（2013）
[111] Huijie Li, Xianglin Liu,Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu,Wei Mao, Yue Hao,Qinsheng Zhu, ZhanguoWang, Determination of polar C-plane and nonpolar A-plane AlN/GaNheterojunction band offsets by X-ray photoelectron spectroscopy,Phys. Status Solidi B, 1–4(2013) / DOI 10.1002/pssb.201350199
[112] ZHAO Gui-Juan(赵桂娟)，YANGShao-Yan(杨少延)，LIUGui-Peng(刘贵鹏)，LIUChang-Bo (刘长波)，SANG Ling(桑玲)，GUCheng-Yan(谷承艳)，LIUXiang-Lin(刘祥林)，WEIHong-Yuan(魏鸿源)，ZHUQin-Sheng(朱勤生)，WANGZhan-Guo(王占国)， StrainDistributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-PlaneSapphire Extracted from X-Ray Diffraction，CHIN. PHYS. LETT.，Vol. 30,No. 9 (2013) 098102
[113] Wang Jian-Xia(王建霞), YangShao-Yan(杨少延),Wang Jun(王俊),Liu Gui-Peng(刘贵鹏),Li Zhi-Wei(李志伟),Li Hui-Jie(李辉杰),Jin Dong-Dong(金东东),Liu Xiang-Lin(刘祥林),ZhuQin-Sheng(朱勤生),and Wang Zhan-Guo(王占国),Electron mobility limited by surface and interface roughness scattering inAlxGa1-xN/GaN quantum wells,Chin.Phys. B, 22( 7) ,077305(2013)
[114] Zhang Heng(张恒), YangShao-Yan(杨少延),Liu Gui-Peng(刘贵鹏),Wang Jian-Xia(王建霞),Jin Dong-Dong(金东东),Li Hui-Jie(李辉杰),Liu Xiang-Lin(刘祥林),ZhuQin-Sheng(朱勤生),and Wang Zhan-Guo(王占国)，Mobilitylimited by cluster scattering in ternary alloy quantum wires，Chin.Phys. B，23,017305(2014)
[115] Wang Jian-Xia, WangLian-Shan, Yang Shao-Yan, Li Hui-Jie, Zhao Gui-Juan, Zhang Heng, Wei Hong-Yuan,Jiao Chun-Mei,Zhu Qin-Sheng, WangZhan-Guo,Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer,Chin.Phys. B., 23 (2), 026801(2014)
[116] Dong-Dong Jin, Lian-shan Wang*, Shao-Yan Yang*, Liu-Wan Zhang, Hui-jie Li, Heng Zhang, Jian-xia Wang,Ruofei Xiang, Hong-yuan Wei, Chun-mei Jiao, Xiang-Lin Liu,Qin-ShengZhu*, and Zhan-Guo Wang，Anisotropic scattering effect of the inclinedmisfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaNheterostructures,J. Appl.Phys.115, 043702 (2014)
[117] Yuxia Feng, Guipeng Liu,Shaoyan Yang, Hongyuan Wei, Xianglin Liu,Qinsheng Zhuand Zhanguo Wang，Interfaceroughness scattering considering the electrical field fluctuation in undopedAlxGa1−xN/GaN heterostructures，Semicond.Sci. Technol. 29(2014)045015
二、授权发明专利（5项）
1、 张志成，杨少延，黎大兵，陈涌海，朱勤生，王占国，发明专利：制备低温超薄异质外延用柔性衬底的方法，专利号：ZL02142452.7，申请日期: 2002.9.19, 授权公告日期：2005.8. 24。
2、 张志成，杨少延，黎大兵，刘祥林，陈涌海，朱勤生，王占国，发明专利：一种氢致解耦合的异质外延用柔性衬底，专利号：ZL03155388.5，申请日期：2003.08.28，授权公告日：2007.10.24
2. 郑高林;杨安丽;宋华平;郭严;魏鸿源;刘祥林;朱勤生;杨少延;王占国 ，发明专利：利用非极性ZnO缓冲层生长非极性InN薄膜的方法 ，专利号201010157517.3，申请日：2010.04.21，授权日：2011.10.19
3. 郭严，宋华平，郑高林，魏鸿源，刘祥林，朱勤生，杨少延，王占国，发明专利：一种生长高质量富In组分InGaN薄膜材料的方法，专利号：201010157637.3，申请日：2010.4.21，授权日：2011.10.5
4. 时凯，刘祥林，魏鸿源，焦春美，王俊，李志伟，宋亚峰，杨少延，朱勤生，王占国,发明专利：利用温度周期调制生长氧化锌材料的方法，专利号：ZL.201110113282.2，申请日：2011.5.4，授权日：2012.7.4
5. 桑玲，王俊，魏鸿源，焦春美，刘祥林，朱勤生，杨少延，王占国，发明专利：一种非极性蓝宝石衬底上生长水平排列氧化锌纳米线的方法，专利号：ZL 201110119981.8，申请日：2011.5.10，授权日：2012.11.21
北京诗词协会王绵和先生沉痛悼念朱勤生先生特赠挽诗一首：
京城天地动哀情，
亲友宾朋洒泪行。
希望之星今陨落，
导师功绩史留名。
朱君遗憾归西去，
旖旎光辉耀眼明。
勤生敬业精神在，
激励他人大器成。
生前同事敬赠挽联一副：
桃李凝霜悼良工 风泽雨露
杜鹃啼血念春心 山高水长
学生敬赠挽词一首：
清平乐-——纪念朱勤生老师
慈爱人生，
满纸教诲谆谆。
昔日音容忆犹在，
桌前不见旧人。
名利如幻如尘，
只为探知育人。
英魂独默悲苦，
遍种桃李满春。
